SCT30N120 specifications -Ameya360 electronic components purchase network


SCT30N120

ACTIVE EAR99
Product description : Single N-Channel 1200 V 270 W 105 nC SiC Through Hole Mosfet - HiP247
SPQ：30
Datasheet : SCT30N120.pdf

Packaging:	Tube
Qg - Gate Charge:	105 nC
Pd - Power Dissipation:	270 W
Package / Case:	TO-247-3
Configuration:	Single
Unit Weight:	1.340411 oz
Number of Channels:	1 Channel
Typical Turn-On Delay Time:	19 ns
Series:	SiC MOSFETs
Factory Pack Quantity:	30
Typical Turn-Off Delay Time:	45 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	1200 V
Transistor Type:	1 N-Channel
ECCN	EAR99
Rds On - Drain-Source Resistance:	80 mOhms
Minimum Operating Temperature:	- 55 C
Technology:	SiC
Vgs th - Gate-Source Threshold Voltage:	2.6 V
Vgs - Gate-Source Voltage:	- 10 V/+ 25 V
Mounting Style:	Through Hole
Fall Time:	28 ns
Manufacturer:	STMicroelectronics
Transistor Polarity:	N-Channel
Brand:	STMicroelectronics
RoHS:	Details
Id - Continuous Drain Current:	45 A
Rise Time:	20 ns
Maximum Operating Temperature:	+ 200 C

Datasheet： SCT30N120.pdf

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Stock code :	3566472
Mfg name :	STMicroelectronics
MPN :	SCT30N120
Product description :	Single N-Channel 1200 V 270 W 105 nC SiC Through Hole Mosfet - HiP247

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