| RW1A025APT2CR | ||
|---|---|---|
|
||
|
||
| Product description : http://www.ameya360.com/product/3513945 | ||
| SPQ：8000 | ||
| Datasheet : |
- Specifications
- Product Attributes
- Documents
- Product reviews
| FET Type | MOSFET P-Channel, Metal Oxide |
|---|---|
| Drain to Source Voltage (Vdss) | 12V |
| Rds On (Max) @ Id, Vgs | 62 mOhm @ 2.5A, 4.5V |
| Gate Charge (Qg) @ Vgs | 16nC @ 4.5V |
| Power - Max | 400mW |
| Mounting Type | Surface Mount |
| Supplier Device Package | 6-WEMT |
| FET 功能 | 逻辑电平栅极，1.5V 驱动 |
| Categories | Discrete Semiconductor Products -> Transistors - FETs, MOSFETs - Single |
| Input Capacitance (Ciss) (Max) @ Vds | 2000pF @ 6V |
| Mounting Type | Surface Mount |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Drain to Source Voltage (Vdss) | 12V |
| Package / Case | SOT-563, SOT-666 |
| Manufacturer | Rohm Semiconductor |
| Part Status | Active |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Lead Free Status / RoHS Status | 1 |
| RoHS | Lead free / RoHS Compliant |
| FET Feature | Logic Level Gate, 1.5V Drive |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Input Capacitance (Ciss) @ Vds | 2000pF @ 6V |
| Operating Temperature | 150°C (TJ) |
| Package / Case | SOT-563, SOT-666 |
| FET 类型 | MOSFET P 通道，金属氧化物 |
| Operating Temperature | 150°C (TJ) |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 16nC @ 4.5V |
| Rds On (Max) @ Id, Vgs | 62 mOhm @ 2.5A, 4.5V |
| Supplier Device Package | 6-WEMT |
| Power Dissipation (Max) | 400mW (Ta) |
| Technology | MOSFET (Metal Oxide) |
| Packaging | Tape & Reel (TR) |
| Vgs (Max) | -8V |
| ECCN | EAR99 |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Datasheet： |
|---|
You can comment after logging in.
Please enter the verification code in the image below：