| 1N5553 | ||
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| 产品描述：
1N5553 Series 800 V 3 A Voidless Hermetically Sealed Recovery Rectifier Diode
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| 标准包装：1 | ||
| 数据手册： |
- 规格参数
- 产品特性
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| Current - Average Rectified (Io) | 3A |
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| Package / Case | B, Axial |
| Diode Type | Standard |
| Category | Discrete Semiconductor Products |
| Reverse Recovery Time (trr) | 2µs |
| Family | Diodes - Rectifiers - Single |
| Voltage - DC Reverse (Vr) (Max) | 800V |
| Packaging | Bulk |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Part Status | Active |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Manufacturer | Microsemi Corporation |
| Current - Reverse Leakage @ Vr | 1µA @ 800V |
| Mounting Type | Through Hole |
| Voltage - Forward (Vf) (Max) @ If | 1.2V @ 9A |
| ECCN | EAR99 |
| 数据手册： |
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