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| 产品描述：
Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
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| 标准包装：1 | ||
| 数据手册： -- |
- 规格参数
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| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
|---|---|
| Resistor - Base (R1) (Ohms) | 22k |
| Power - Max | 200mW |
| Resistor - Emitter Base (R2) (Ohms) | 22k |
| Current - Collector (Ic) (Max) | 100mA |
| Category | Discrete Semiconductor Products |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Mounting Type | Surface Mount |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 10mA, 5V |
| Frequency - Transition | 250MHz, 200MHz |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Supplier Device Package | US6 |
| Part Status | Active |
| Manufacturer | Toshiba Semiconductor and Storage |
| Family | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
| Current - Collector Cutoff (Max) | 500nA |
| Packaging | Cut Tape (CT) |
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