| NSBC123JPDXV6T5G | ||
|---|---|---|
|
|
||
|
||
| Product description : Dual Bias Resistor Transistors | ||
| SPQ：1 | ||
| Datasheet : -- |
- Specifications
- Product Attributes
- Documents
- Product reviews
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
|---|---|
| Resistor - Base (R1) (Ohms) | 2.2k |
| Power - Max | 500mW |
| Resistor - Emitter Base (R2) (Ohms) | 47k |
| PCN Design/Specification | Wire Bond 01/Dec/2010 |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Mounting Type | Surface Mount |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| RoHS | Lead free / RoHS Compliant |
| Package / Case | SOT-563, SOT-666 |
| PCN Assembly/Origin | Qualification Assembly/Test Site 25/Sep/2014 |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Supplier Device Package | SOT-563 |
| Current - Collector (Ic) (Max) | 100mA |
| Family | Transistors (BJT) - Arrays, Pre-Biased |
| Current - Collector Cutoff (Max) | 500nA |
| Packaging | Tape & Reel (TR) |
You can comment after logging in.
Please enter the verification code in the image below：