SI7998DP-T1-GE3 specifications -Ameya360 electronic components purchase network


SI7998DP-T1-GE3

ACTIVE PowerPAK® SO-8 Dual EAR99
Product description : Dual N-Channel 30 V 0.0093 Ohm 40 W Surface Mount Power Mosfet - PowerPAK-SO-8
SPQ：1
Datasheet : SI7998DP-T1-GE3.pdf

FET Feature	Logic Level Gate
Package / Case	PowerPAK® SO-8 Dual
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	25A, 30A
FET Type	2 N-Channel (Dual)
Series	TrenchFET®
Mounting Type	Surface Mount
Input Capacitance (Ciss) @ Vds	1100pF @ 15V
RoHS	Lead free / RoHS Compliant
Rds On (Max) @ Id, Vgs	9.3 mOhm @ 15A, 10V
Power - Max	22W, 40W
Supplier Device Package	PowerPAK® SO-8 Dual
Gate Charge (Qg) @ Vgs	26nC @ 10V
Online Catalog	N-Channel Logic Level Gate FETs
Family	FETs - Arrays
Vgs(th) (Max) @ Id	2.5V @ 250µA
Packaging	Digi-Reel®
ECCN	EAR99

Datasheet： SI7998DP-T1-GE3.pdf

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Stock code :	33677
Mfg name :	Vishay
MPN :	SI7998DP-T1-GE3
Product description :	Dual N-Channel 30 V 0.0093 Ohm 40 W Surface Mount Power Mosfet - PowerPAK-SO-8

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