PDTD113ES,126
  • 量产中
  • TO-92-3
产品描述:
TRANS PREBIAS NPN 500MW TO92-3
标准包装:2000
数据手册: --
ECAD模型:
  • 规格参数
  • 产品特性
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Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Transistor Type NPN - Pre-Biased
Supplier Device Package TO-92-3
Current - Collector (Ic) (Max) 500mA
Voltage - Collector Emitter Breakdown (Max) 50V
Mounting Type Through Hole
DC Current Gain (hFE) (Min) @ Ic, Vce 33 @ 50mA, 5V
Resistor - Base (R1) (Ohms) 1k
Power - Max 500mW
Resistor - Emitter Base (R2) (Ohms) 1k
Standard Package   2,000
Packaging   Tape & Box (TB)  
Family Transistors (BJT) - Single, Pre-Biased
Current - Collector Cutoff (Max) 500nA
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