Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
---|---|
Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
Transistor Type | NPN - Pre-Biased |
Supplier Device Package | TO-92-3 |
Current - Collector (Ic) (Max) | 500mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Mounting Type | Through Hole |
DC Current Gain (hFE) (Min) @ Ic, Vce | 33 @ 50mA, 5V |
Resistor - Base (R1) (Ohms) | 1k |
Power - Max | 500mW |
Resistor - Emitter Base (R2) (Ohms) | 1k |
Standard Package | 2,000 |
Packaging | Tape & Box (TB) |
Family | Transistors (BJT) - Single, Pre-Biased |
Current - Collector Cutoff (Max) | 500nA |