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| 产品描述：
2N5550 Series 140 V 600 mA NPN Epitaxial Silicon Transistor - TO-92-3
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| 标准包装：2000 | ||
| 数据手册： |
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| Collector- Base Voltage VCBO: | 160 V |
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| Collector-Emitter Saturation Voltage: | 0.25 V |
| Minimum Operating Temperature: | - 55 C |
| Package / Case: | TO-92-3 Kinked Lead |
| Gain Bandwidth Product fT: | 300 MHz |
| Unit Weight: | 0.008466 oz |
| Emitter- Base Voltage VEBO: | 6 V |
| DC Current Gain hFE Max: | 250 |
| Length: | 4.7 mm |
| Manufacturer: | Fairchild Semiconductor |
| Factory Pack Quantity: | 2000 |
| Part # Aliases: | 2N5550TFR_NL |
| Product Category: | Bipolar Transistors - BJT |
| Maximum Operating Temperature: | + 150 C |
| Width: | 3.93 mm |
| Packaging: | Reel |
| Pd - Power Dissipation: | 625 mW |
| Height: | 4.7 mm |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Maximum DC Collector Current: | 0.6 A |
| Continuous Collector Current: | 0.6 A |
| DC Collector/Base Gain hfe Min: | 60 |
| Transistor Polarity: | NPN |
| Brand: | Fairchild Semiconductor |
| RoHS: | Details |
| Collector- Emitter Voltage VCEO Max: | 140 V |
| ECCN | EAR99 |
| 数据手册： |
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