2N5551BU
  • 量产中
  • EAR99
产品描述:
2N5551 Series 160 V CE Breakdown 0.6 A NPN General Purpose Amplifier - TO-92-3
标准包装:1
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Collector- Base Voltage VCBO: 180 V
Collector-Emitter Saturation Voltage: 0.2 V
Minimum Operating Temperature: - 55 C
Package / Case: TO-92
Gain Bandwidth Product fT: 300 MHz
Unit Weight: 0.006314 oz
Emitter- Base Voltage VEBO: 6 V
DC Current Gain hFE Max: 250
Length: 4.7 mm
Manufacturer: Fairchild Semiconductor
Factory Pack Quantity: 10000
Part # Aliases: 2N5551BU_NL
Product Category: Bipolar Transistors - BJT
Maximum Operating Temperature: + 150 C
Width: 3.93 mm
Packaging: Bulk
Pd - Power Dissipation: 625 mW
Height: 4.7 mm
Configuration: Single
Mounting Style: Through Hole
Maximum DC Collector Current: 0.6 A
Continuous Collector Current: 0.6 A
DC Collector/Base Gain hfe Min: 80
Transistor Polarity: NPN
Brand: Fairchild Semiconductor
RoHS:  Details
Collector- Emitter Voltage VCEO Max: 160 V
ECCN EAR99
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