| 2N6517BU | ||
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| 产品描述：
Transistor: NPN; bipolar; 350V; 500mA; 625mW; TO92
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| 标准包装：1 | ||
| 数据手册： |
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| Collector- Base Voltage VCBO: | 350 V |
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| Collector-Emitter Saturation Voltage: | 1 V |
| Minimum Operating Temperature: | - 55 C |
| Package / Case: | TO-92 |
| Gain Bandwidth Product fT: | 200 MHz |
| Unit Weight: | 0.006314 oz |
| Emitter- Base Voltage VEBO: | 6 V |
| DC Current Gain hFE Max: | 200 |
| Length: | 4.7 mm |
| Manufacturer: | Fairchild Semiconductor |
| Factory Pack Quantity: | 10000 |
| Part # Aliases: | 2N6517BU_NL |
| Product Category: | Bipolar Transistors - BJT |
| Maximum Operating Temperature: | + 150 C |
| Width: | 3.93 mm |
| Packaging: | Bulk |
| Pd - Power Dissipation: | 625 mW |
| Height: | 4.7 mm |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Maximum DC Collector Current: | 0.5 A |
| Continuous Collector Current: | 0.5 A |
| DC Collector/Base Gain hfe Min: | 30 |
| Transistor Polarity: | NPN |
| Brand: | Fairchild Semiconductor |
| RoHS: | Details |
| Collector- Emitter Voltage VCEO Max: | 350 V |
| ECCN | EAR99 |
| 数据手册： |
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