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| 产品描述：
N-Channel 60 V 5 Ohm Enhancement Mode Field Effect Transistor-TO-92-3
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| 标准包装：10000 | ||
| 数据手册： |
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| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
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| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 200mA (Ta) |
| Category | Discrete Semiconductor Products |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Packaging | Bulk |
| Rds On (Max) @ Id, Vgs | 5 Ohm @ 500mA, 10V |
| Power - Max | 400mW |
| Supplier Device Package | TO-92-3 |
| Part Status | Active |
| Manufacturer | Fairchild Semiconductor |
| Family | Transistors - FETs, MOSFETs - Single |
| Mounting Type | Through Hole |
| Input Capacitance (Ciss) @ Vds | 50pF @ 25V |
| ECCN | EAR99 |
| 数据手册： |
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