2SC5551AF-TD-E
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2SC5551AF-TD-E , NPN 射频双极晶体管, 300 mA, Vce=30 V, HFE:20, 3.5 GHz, 3针 PCP封装
标准包装:1
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Continuous Collector Current: 300 mA
Emitter- Base Voltage VEBO: 2 V
Manufacturer: ON Semiconductor
Pd - Power Dissipation: 1.3 W
Transistor Polarity: NPN
Brand: ON Semiconductor
Package / Case: PCP-3
Collector- Emitter Voltage VCEO Max: 30 V
Transistor Type: Bipolar
Maximum Operating Temperature: + 150 C
Packaging: Reel
DC Collector/Base Gain hfe Min: 90 at 50 mA at 5 V
Series: 2SC5551A
Minimum Operating Temperature: - 55 C
Factory Pack Quantity: 1000
RoHS:  Details
Product Category: RF Bipolar Transistors
Configuration: Single
Mounting Style: SMD/SMT
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