| 2SK3666-3-TB-E | ||
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| 产品描述：
Transistor: N-JFET; unipolar; 30V; 10mA; 200mW; SOT23; Igt: 10mA
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| 标准包装：5 | ||
| 数据手册： |
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| Rds On - Drain-Source Resistance: | 200 Ohms |
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| Packaging: | Reel |
| Manufacturer: | ON Semiconductor |
| Pd - Power Dissipation: | 200 mW |
| Factory Pack Quantity: | 3000 |
| RoHS: | Details |
| Vgs - Gate-Source Breakdown Voltage: | - 30 V |
| Id - Continuous Drain Current: | 10 mA |
| Configuration: | Single |
| Gate-Source Cutoff Voltage: | - 1 nA |
| Maximum Operating Temperature: | + 150 C |
| Forward Transconductance - Min: | 3 ms |
| Drain-Source Current at Vgs=0: | 10 mA |
| Series: | 2SK3666 |
| Transistor Polarity: | N-Channel |
| Brand: | ON Semiconductor |
| Package / Case: | SC-59-3 |
| Product Category: | JFET |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Unit Weight: | 0.000282 oz |
| Mounting Style: | SMD/SMT |
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