| NVMFS5C442NLT1G | ||
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| Product description : 40V,126A,2.8mΩ,N-Channel Power MOSFET | ||
| SPQ：1500 | ||
| Datasheet : | ||
| ECAD Model:
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- Specifications
- Product Attributes
- Documents
- Product reviews
| Packaging: | Reel |
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| Qg - Gate Charge: | 50 nC |
| Pd - Power Dissipation: | 83 W |
| Package / Case: | DFN5-8 |
| Configuration: | 1 N-Channel |
| Mounting Style: | SMD/SMT |
| Fall Time: | 8.4 ns |
| Forward Transconductance - Min: | 116 S |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Typical Turn-Off Delay Time: | 28 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 40 V |
| Transistor Type: | 1 N-Channel |
| Rds On - Drain-Source Resistance: | 2 MOhms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Vgs th - Gate-Source Threshold Voltage: | 1.2 V |
| Vgs - Gate-Source Voltage: | +/- 20 V |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 12 ns |
| Manufacturer: | ON Semiconductor |
| Factory Pack Quantity: | 1500 |
| Brand: | ON Semiconductor |
| RoHS: | Details |
| Id - Continuous Drain Current: | 130 A |
| Rise Time: | 72 ns |
| Maximum Operating Temperature: | + 175 C |
| Datasheet： |
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- Replacement Products
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- P2P:A direct drop-in replacement or second source option. Possible minor parametric differences. No change required in most designs.
- Functional Equivalent:A direct replacement or second source option. Possible major parametric differences. Changes may be required in some designs.
- Contain: The functions that one IC can achieve contain the functions that another IC can achieve.
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