| NVJD5121NT1G | ||
|---|---|---|
|
|
||
|
||
| 产品描述:
60V, 295mA, 1.6Ω, Dual N−Channel Power MOSFET with ESD Protection
|
||
| 标准包装:1 | ||
| 数据手册: |
| FET Feature | Standard |
|---|---|
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 295mA |
| Part Status | Active |
| Manufacturer | ON Semiconductor |
| Family | Transistors - FETs, MOSFETs - Arrays |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) @ Vds | 26pF @ 20V |
| Rds On (Max) @ Id, Vgs | 1.6 Ohm @ 500mA, 10V |
| Power - Max | 250mW |
| Supplier Device Package | SC-88/SC70-6/SOT-363 |
| Gate Charge (Qg) @ Vgs | 0.9nC @ 4.5V |
| Category | Discrete Semiconductor Products |
| FET Type | 2 N-Channel (Dual) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Packaging | Tape & Reel (TR) |
| 数据手册: |
|---|
请输入下方图片中的验证码: