FET Feature | Logic Level Gate |
---|---|
Package / Case | 8-WDFN Exposed Pad |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 6.6A (Ta), 34A(Tc) |
Gate Charge (Qg) @ Vgs | 8.8nC @ 4.5V |
FET Type | MOSFET N-Channel, Metal Oxide |
Vgs(th) (Max) @ Id | 2.2V @ 250µA |
Input Capacitance (Ciss) @ Vds | 920pF @ 15V |
Rds On (Max) @ Id, Vgs | 11 mOhm @ 10A, 10V |
Power - Max | 810mW |
Supplier Device Package | 8-WDFN (3.3x3.3) |
Standard Package | 1,500 |
Packaging | Tape & Reel (TR) |
Family | FETs - Single |
Mounting Type | Surface Mount |
数据手册: |
---|