NTMFS6B05NT1G specifications -Ameya360 electronic components purchase network


NTMFS6B05NT1G

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Product description : 100V,104A,8mΩ,Single N-Ch Power MOSFET
SPQ：1500
Datasheet : NTMFS6B05NT1G.pdf

Packaging:	Reel
Qg - Gate Charge:	44 nC
Pd - Power Dissipation:	138 W
Package / Case:	SO-8FL
Configuration:	Single Triple Source
Mounting Style:	SMD/SMT
Fall Time:	16 ns
Manufacturer:	ON Semiconductor
Factory Pack Quantity:	1500
Brand:	ON Semiconductor
RoHS:	Details
Id - Continuous Drain Current:	104 A
Rise Time:	43 ns
Maximum Operating Temperature:	+ 150 C
Rds On - Drain-Source Resistance:	6.5 mOhms
Minimum Operating Temperature:	- 55 C
Technology:	Si
Vgs th - Gate-Source Threshold Voltage:	2 V
Vgs - Gate-Source Voltage:	20 V
Number of Channels:	1 Channel
Typical Turn-On Delay Time:	14 ns
Transistor Polarity:	N-Channel
Channel Mode:	Enhancement
Typical Turn-Off Delay Time:	39 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	100 V
Transistor Type:	1 N-Channel

Datasheet： NTMFS6B05NT1G.pdf

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