NSV40301MDR2G specifications -Ameya360 electronic components purchase network


NSV40301MDR2G

ACTIVE 8-SOIC EAR99
Product description : 40 V, 3.0 A Dual NPN Low VCE(sat) Bipolar Transistor
SPQ：2500
Datasheet : NSV40301MDR2G.pdf

Vce Saturation (Max) @ Ib, Ic	115mV @ 200mA, 2A
Package / Case	8-SOIC (0.154", 3.90mm Width)
Transistor Type	2 NPN (Dual)
Current - Collector (Ic) (Max)	3A
Category	Discrete Semiconductor Products
Voltage - Collector Emitter Breakdown (Max)	40V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Packaging	Tape & Reel (TR)
Frequency - Transition	100MHz
Power - Max	653mW
Supplier Device Package	8-SOIC
Part Status	Active
Manufacturer	ON Semiconductor
Family	Transistors - Bipolar (BJT) - Arrays
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	180 @ 2A, 2V
ECCN	EAR99

Datasheet： NSV40301MDR2G.pdf

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Stock code :	3170861
Mfg name :	onsemi
MPN :	NSV40301MDR2G
Product description :	40 V, 3.0 A Dual NPN Low VCE(sat) Bipolar Transistor

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