| NSV40301MDR2G | ||
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| 产品描述：
40 V, 3.0 A Dual NPN Low VCE(sat) Bipolar Transistor
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| 标准包装：2500 | ||
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| Vce Saturation (Max) @ Ib, Ic | 115mV @ 200mA, 2A |
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| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Transistor Type | 2 NPN (Dual) |
| Current - Collector (Ic) (Max) | 3A |
| Category | Discrete Semiconductor Products |
| Voltage - Collector Emitter Breakdown (Max) | 40V |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Packaging | Tape & Reel (TR) |
| Frequency - Transition | 100MHz |
| Power - Max | 653mW |
| Supplier Device Package | 8-SOIC |
| Part Status | Active |
| Manufacturer | ON Semiconductor |
| Family | Transistors - Bipolar (BJT) - Arrays |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 2A, 2V |
| ECCN | EAR99 |
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