NSBA124EDXV6T1G
NSBA124EDXV6T1G
  • ACTIVE
  • SOT-563
Product description : 50V Dual Bipolar Digital Transistor
SPQ:1
Datasheet : --
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  • Product Attributes
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Vce Saturation (Max) @ Ib, Ic 250mV @ 300碌A, 10mA
PCN Assembly/Origin Wafer Source Addition 26/Nov/2014
Power - Max 500mW
Resistor - Emitter Base (R2) (Ohms) 22k
Standard Package   4,000
Packaging   Tape & Reel (TR)  
Family Transistors (BJT) - Arrays, Pre-Biased
Current - Collector Cutoff (Max) 500nA
Resistor - Base (R1) (Ohms) 22k
Package / Case SOT-563, SOT-666
Transistor Type 2 PNP - Pre-Biased (Dual)
Supplier Device Package SOT-563
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Mounting Type Surface Mount
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 5mA, 10V
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