Output Power: | 70 W |
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Width: | 6.4 mm |
Minimum Operating Temperature: | - 65 C |
Technology: | Si |
Vgs th - Gate-Source Threshold Voltage: | 3 V |
Configuration: | Dual |
Mounting Style: | SMD/SMT |
Gain: | 11.5 dB |
Manufacturer: | NXP |
Transistor Polarity: | N-Channel |
Channel Mode: | Enhancement |
RoHS: | Details |
Vds - Drain-Source Breakdown Voltage: | 40 V |
Maximum Operating Temperature: | + 150 C |
Operating Frequency: | 470 MHz |
Packaging: | Reel |
Pd - Power Dissipation: | 165 W |
Package / Case: | TO-272-8 Wrap EP |
Height: | 2.64 mm |
Vgs - Gate-Source Voltage: | +/- 20 V |
Unit Weight: | 0.045059 oz |
Length: | 23.67 mm |
Series: | MRF1570N |
Factory Pack Quantity: | 500 |
Brand: | NXP / Freescale |
Product Category: | RF MOSFET Transistors |
Type: | RF Power MOSFET |
数据手册: |
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