SI1026X-T1-GE3 specifications -Ameya360 electronic components purchase network


SI1026X-T1-GE3

ACTIVE SC-89-6
Product description : Single N-Channel 60 V 3 Ω 250 mW Surface Mount Power Mosfet - SC-89-6
SPQ：1
Datasheet : SI1026X-T1-GE3.pdf

FET Feature	Logic Level Gate
Package / Case	SOT-563, SOT-666
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	305mA
FET Type	2 N-Channel (Dual)
Family	FETs - Arrays
Vgs(th) (Max) @ Id	2.5V @ 250µA
Packaging	Cut Tape (CT)
Rds On (Max) @ Id, Vgs	1.4 Ohm @ 500mA, 10V
Power - Max	250mW
Supplier Device Package	SC-89-6
Gate Charge (Qg) @ Vgs	0.6nC @ 4.5V
Online Catalog	N-Channel Logic Level Gate FETs
Mounting Type	Surface Mount
Input Capacitance (Ciss) @ Vds	30pF @ 25V
RoHS	Lead free / RoHS Compliant

Datasheet： SI1026X-T1-GE3.pdf

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Stock code :	29514
Mfg name :	Vishay
MPN :	SI1026X-T1-GE3
Product description :	Single N-Channel 60 V 3 Ω 250 mW Surface Mount Power Mosfet - SC-89-6

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