SI4483ADY-T1-GE3 specifications -Ameya360 electronic components purchase network


SI4483ADY-T1-GE3

ACTIVE 8-SO EAR99
Product description : Transistor: P-MOSFET; unipolar; -30V; -15.4A; 3.8W; SO8
SPQ：1
Datasheet : SI4483ADY-T1-GE3.pdf

FET Feature	Standard
Package / Case	8-SOIC (0.154", 3.90mm Width)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	19.2A (Tc)
FET Type	MOSFET P-Channel, Metal Oxide
Series	TrenchFET®
Mounting Type	Surface Mount
Input Capacitance (Ciss) @ Vds	3900pF @ 15V
RoHS	Lead free / RoHS Compliant
Rds On (Max) @ Id, Vgs	8.8 mOhm @ 10A, 10V
Power - Max	5.9W
Supplier Device Package	8-SO
Gate Charge (Qg) @ Vgs	135nC @ 10V
Online Catalog	P-Channel Standard FETs
Family	FETs - Single
Vgs(th) (Max) @ Id	2.6V @ 250µA
Packaging	Tape & Reel (TR)
ECCN	EAR99

Datasheet： SI4483ADY-T1-GE3.pdf

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Stock code :	28419
Mfg name :	Vishay
MPN :	SI4483ADY-T1-GE3
Product description :	Transistor: P-MOSFET; unipolar; -30V; -15.4A; 3.8W; SO8

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