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| 产品描述： | ||
| 标准包装：1 | ||
| 数据手册： -- | ||
| ECAD模型:
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- 规格参数
- 产品特性
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| Packaging: | Reel |
|---|---|
| Drain-Source Current at Vgs=0: | 3 mA |
| Pd - Power Dissipation: | 360 mW |
| Factory Pack Quantity: | 1 |
| Brand: | InterFET |
| Package / Case: | TO-92-3 |
| Product Category: | JFET |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Unit Weight: | 0.016000 oz |
| Mounting Style: | Through Hole |
| Forward Transconductance - Min: | 500 uS |
| Manufacturer: | InterFET |
| Transistor Polarity: | N-Channel |
| Technology: | Si |
| RoHS: | Details |
| Vgs - Gate-Source Breakdown Voltage: | - 25 V |
| Id - Continuous Drain Current: | 10 nA |
| Configuration: | Single |
| Gate-Source Cutoff Voltage: | - 2 V |
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