| IXTX170P10P | ||
|---|---|---|
|
|
||
|
||
| 产品描述：
Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -170A; 890W; 176ns
|
||
| 标准包装：1 | ||
| 数据手册： |
- 规格参数
- 产品特性
- 技术文档
- 产品评论
| FET Feature | Standard |
|---|---|
| Package / Case | TO-247-3 |
| Drain to Source Voltage (Vdss) | 100V |
| Standard Package | 30 |
| Current - Continuous Drain (Id) @ 25掳C | 170A (Tc) |
| FET Type | MOSFET P-Channel, Metal Oxide |
| Family | FETs - Single |
| Mounting Type | Through Hole |
| Rds On (Max) @ Id, Vgs | 12 mOhm @ 500mA, 10V |
| Power - Max | 890W |
| Supplier Device Package | PLUS247鈩�3 |
| Gate Charge (Qg) @ Vgs | 240nC @ 10V |
| Packaging | Tube |
| Series | PolarP鈩�/a> |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Input Capacitance (Ciss) @ Vds | 12600pF @ 25V |
| 数据手册： |
|---|
登录之后就可发表评论
请输入下方图片中的验证码：