IXTT10P60 | ||
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产品描述:
Transistor: P-MOSFET; unipolar; -600V; -10A; 300W; TO268; 500ns
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标准包装:1 | ||
数据手册: |
FET Feature | Standard |
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Package / Case | TO-268-3, D鲁Pak (2 Leads + Tab), TO-268AA |
Drain to Source Voltage (Vdss) | 600V |
Standard Package | 30 |
Current - Continuous Drain (Id) @ 25掳C | 10A (Tc) |
FET Type | MOSFET P-Channel, Metal Oxide |
Vgs(th) (Max) @ Id | 5V @ 250碌A |
Input Capacitance (Ciss) @ Vds | 4700pF @ 25V |
Rds On (Max) @ Id, Vgs | 1 Ohm @ 5A, 10V |
Power - Max | 300W |
Supplier Device Package | TO-268 |
Gate Charge (Qg) @ Vgs | 160nC @ 10V |
Packaging | Tube |
Family | FETs - Single |
Mounting Type | Surface Mount |
ECCN | EAR99 |
数据手册: |
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