IXTR200N10P
IXTR200N10P
  • 量产中
  • ISOPLUS247™
  • EAR99
产品描述:
Transistor: N-MOSFET; Polar™; unipolar; 100V; 120A; 300W; 100ns
标准包装:1
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FET Feature Standard
Package / Case ISOPLUS247™
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Gate Charge (Qg) @ Vgs 235nC @ 10V
FET Type MOSFET N-Channel, Metal Oxide
Family FETs - Single
Mounting Type Through Hole
ECCN EAR99
Rds On (Max) @ Id, Vgs 8 mOhm @ 60A, 10V
Power - Max 300W
Supplier Device Package ISOPLUS247™
Standard Package   30
Packaging   Tube  
Series HiPerFET™, PolarP2™
Vgs(th) (Max) @ Id 5V @ 500µA
Input Capacitance (Ciss) @ Vds 7600pF @ 25V
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