IXTH3N100P
  • 量产中
  • TO-247 (IXTH)
  • ECL99
产品描述:
Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO247-3; 820ns
标准包装:1
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FET Feature Standard
Package / Case TO-247-3
Drain to Source Voltage (Vdss) 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C 3A (Tc)
Gate Charge (Qg) @ Vgs 39nC @ 10V
FET Type MOSFET N-Channel, Metal Oxide
Family FETs - Single
Mounting Type Through Hole
ECCN ECL99
Rds On (Max) @ Id, Vgs 4.8 Ohm @ 1.5A, 10V
Power - Max 125W
Supplier Device Package TO-247 (IXTH)
Standard Package   30
Packaging   Tube  
Series PolarVHV™
Vgs(th) (Max) @ Id 4.5V @ 250µA
Input Capacitance (Ciss) @ Vds 1100pF @ 25V
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