FET Feature | Logic Level Gate |
---|---|
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25°C | 104A (Tc) |
Gate Charge (Qg) @ Vgs | 68nC @ 4.5V |
Packaging | Tube |
Series | HEXFET® |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Input Capacitance (Ciss) @ Vds | 3445pF @ 25V |
Rds On (Max) @ Id, Vgs | 8 mOhm @ 62A, 10V |
Power - Max | 2.4W |
Supplier Device Package | TO-262 |
Standard Package | 50 |
Product Training Modules | Discrete Power MOSFETs 40V and Below |
FET Type | MOSFET N-Channel, Metal Oxide |
Family | FETs - Single |
Mounting Type | Through Hole |
ECCN | EAR99 |