| IRFSL5615PBF | ||
|---|---|---|
|
|
||
|
||
| 产品描述：
IRFSL5615PBF , N沟道 MOSFET 晶体管, 33 A, Vds=150 V, 3针 TO-262封装
|
||
| 标准包装：50 | ||
| 数据手册： -- |
- 规格参数
- 产品特性
- 技术文档
- 产品评论
| FET Feature | Standard |
|---|---|
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Power - Max | 144W |
| Drain to Source Voltage (Vdss) | 150V |
| Current - Continuous Drain (Id) @ 25°C | 33A (Tc) |
| Gate Charge (Qg) @ Vgs | 40nC @ 10V |
| Packaging | Tube |
| Family | FETs - Single |
| Mounting Type | Through Hole |
| ECCN | EAR99 |
| Rds On (Max) @ Id, Vgs | 42 mOhm @ 21A, 10V |
| PCN Assembly/Origin | Mosfet Backend Wafer Processing 23/Oct/2013 |
| PCN Obsolescence/ EOL | Multiple Devices 25/Apr/2014 Revision with Removed Parts 10/Oct/2014 |
| Supplier Device Package | TO-262 |
| Standard Package | 50 |
| Product Training Modules | High Voltage Integrated Circuits (HVIC Gate Drivers) |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Vgs(th) (Max) @ Id | 5V @ 100µA |
| Input Capacitance (Ciss) @ Vds | 1750pF @ 50V |
登录之后就可发表评论
请输入下方图片中的验证码：