| IPP027N08N5AKSA1 | ||
|---|---|---|
|
|
||
|
||
| 产品描述：
MOSFET N-CH TO220-3
|
||
| 标准包装：1 | ||
| 数据手册： | ||
| ECAD模型:
|
- 规格参数
- 产品特性
- 技术文档
- 产品评论
| Packaging: | Tube |
|---|---|
| Qg - Gate Charge: | 99 nC |
| Pd - Power Dissipation: | 214 W |
| Package / Case: | TO-220-3 |
| Configuration: | Single |
| Unit Weight: | 0.211644 oz |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 22 ns |
| Manufacturer: | Infineon |
| Factory Pack Quantity: | 500 |
| Brand: | Infineon Technologies |
| Typical Turn-Off Delay Time: | 46 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 80 V |
| Transistor Type: | 1 N-Channel |
| Rds On - Drain-Source Resistance: | 3.4 mOhms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Vgs th - Gate-Source Threshold Voltage: | 2.2 V |
| Vgs - Gate-Source Voltage: | +/- 20 V |
| Mounting Style: | Through Hole |
| Fall Time: | 15 ns |
| Forward Transconductance - Min: | 89 S |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Part # Aliases: | IPP027N08N5 SP001132484 |
| RoHS: | Details |
| Id - Continuous Drain Current: | 120 A |
| Rise Time: | 14 ns |
| Maximum Operating Temperature: | + 175 C |
| 数据手册： |
|---|
登录之后就可发表评论
