IPD90R1K2C3ATMA1 specifications -Ameya360 electronic components purchase network


IPD90R1K2C3ATMA1

ACTIVE PG-TO252-3 EAR99
Product description : Single N-Channel 900 V 1.2 Ohm 28 nC CoolMOS™ Power Mosfet - TO-252-3
SPQ：1
Datasheet : IPD90R1K2C3ATMA1.pdf
ECAD Model:

FET Feature	Standard
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Drain to Source Voltage (Vdss)	900V
Current - Continuous Drain (Id) @ 25°C	5.1A (Tc)
Part Status	Active
Manufacturer	Infineon Technologies
Series	CoolMOS™
Vgs(th) (Max) @ Id	3.5V @ 310µA
Operating Temperature	-55°C ~ 150°C (TJ)
Packaging	Tape & Reel (TR)
Rds On (Max) @ Id, Vgs	1.2 Ohm @ 2.8A, 10V
Power - Max	83W
Supplier Device Package	PG-TO252-3
Gate Charge (Qg) @ Vgs	28nC @ 10V
Category	Discrete Semiconductor Products
FET Type	MOSFET N-Channel, Metal Oxide
Family	Transistors - FETs, MOSFETs - Single
Mounting Type	Surface Mount
Input Capacitance (Ciss) @ Vds	710pF @ 100V
ECCN	EAR99

Datasheet： IPD90R1K2C3ATMA1.pdf

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Stock code :	2771362
Mfg name :	Infineon Technologies
MPN :	IPD90R1K2C3ATMA1
Product description :	Single N-Channel 900 V 1.2 Ohm 28 nC CoolMOS™ Power Mosfet - TO-252-3

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