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产品描述:
Single N-Channel 900 V 1.2 Ohm 28 nC CoolMOS™ Power Mosfet - TO-252-3
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标准包装:1 | ||
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FET Feature | Standard |
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Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Drain to Source Voltage (Vdss) | 900V |
Current - Continuous Drain (Id) @ 25°C | 5.1A (Tc) |
Part Status | Active |
Manufacturer | Infineon Technologies |
Series | CoolMOS™ |
Vgs(th) (Max) @ Id | 3.5V @ 310µA |
Operating Temperature | -55°C ~ 150°C (TJ) |
Packaging | Tape & Reel (TR) |
Rds On (Max) @ Id, Vgs | 1.2 Ohm @ 2.8A, 10V |
Power - Max | 83W |
Supplier Device Package | PG-TO252-3 |
Gate Charge (Qg) @ Vgs | 28nC @ 10V |
Category | Discrete Semiconductor Products |
FET Type | MOSFET N-Channel, Metal Oxide |
Family | Transistors - FETs, MOSFETs - Single |
Mounting Type | Surface Mount |
Input Capacitance (Ciss) @ Vds | 710pF @ 100V |
ECCN | EAR99 |
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