| IPD60R950C6ATMA1 | ||
|---|---|---|
|
|
||
|
||
| 产品描述：
Single N-Channel 600 V 950 mOhm 13 nC CoolMOS™ Power Mosfet - DPAK-3
|
||
| 标准包装：1 | ||
| 数据手册： -- |
- 规格参数
- 产品特性
- 技术文档
- 产品评论
| FET Feature | Standard |
|---|---|
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 4.4A (Tc) |
| Part Status | Active |
| Manufacturer | Infineon Technologies |
| Series | CoolMOS™ C6 |
| Vgs(th) (Max) @ Id | 3.5V @ 130µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Packaging | Cut Tape (CT) |
| Rds On (Max) @ Id, Vgs | 950 mOhm @ 1.5A, 10V |
| Power - Max | 37W |
| Supplier Device Package | PG-TO252-3 |
| Gate Charge (Qg) @ Vgs | 13nC @ 10V |
| Category | Discrete Semiconductor Products |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | Transistors - FETs, MOSFETs - Single |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) @ Vds | 280pF @ 100V |
| ECCN | EAR99 |
登录之后就可发表评论
请输入下方图片中的验证码：