IPD60R380C6ATMA1 specifications -Ameya360 electronic components purchase network


IPD60R380C6ATMA1

ACTIVE PG-TO252-3 EAR99
Product description : Single N-Channel 650 V 380 mOhm 32 nC CoolMOS™ Power Mosfet - TO-252-3
SPQ：2500
Datasheet : IPD60R380C6ATMA1.pdf

FET Feature	Standard
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	10.6A (Tc)
Part Status	Active
Manufacturer	Infineon Technologies
Series	CoolMOS™ C6
Vgs(th) (Max) @ Id	3.5V @ 320µA
Operating Temperature	-55°C ~ 150°C (TJ)
Packaging	Tape & Reel (TR)
Rds On (Max) @ Id, Vgs	380 mOhm @ 3.8A, 10V
Power - Max	83W
Supplier Device Package	PG-TO252-3
Gate Charge (Qg) @ Vgs	32nC @ 10V
Category	Discrete Semiconductor Products
FET Type	MOSFET N-Channel, Metal Oxide
Family	Transistors - FETs, MOSFETs - Single
Mounting Type	Surface Mount
Input Capacitance (Ciss) @ Vds	700pF @ 100V
ECCN	EAR99

Datasheet： IPD60R380C6ATMA1.pdf

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Stock code :	2771326
Mfg name :	Infineon Technologies
MPN :	IPD60R380C6ATMA1
Product description :	Single N-Channel 650 V 380 mOhm 32 nC CoolMOS™ Power Mosfet - TO-252-3

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