IPB027N10N5ATMA1 specifications -Ameya360 electronic components purchase network


IPB027N10N5ATMA1

ACTIVE PG-TO263-3 EAR99
Product description : Single N-Channel 100 V 2.7 mOhm 142 nC OptiMOS™5 Power Mosfet - D2PAK-3
SPQ：1000
Datasheet : IPB027N10N5ATMA1.pdf

FET Feature	Standard
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Part Status	Active
Manufacturer	Infineon Technologies
Series	OptiMOS™
Vgs(th) (Max) @ Id	3.8V @ 184µA
Operating Temperature	-55°C ~ 175°C (TJ)
Packaging	Cut Tape (CT)
Rds On (Max) @ Id, Vgs	2.7 mOhm @ 100A, 10V
Power - Max	250W
Supplier Device Package	PG-TO263-3
Gate Charge (Qg) @ Vgs	139nC @ 10V
Category	Discrete Semiconductor Products
FET Type	MOSFET N-Channel, Metal Oxide
Family	Transistors - FETs, MOSFETs - Single
Mounting Type	Surface Mount
Input Capacitance (Ciss) @ Vds	10300pF @ 50V
ECCN	EAR99

Datasheet： IPB027N10N5ATMA1.pdf

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Stock code :	2770963
Mfg name :	Infineon Technologies
MPN :	IPB027N10N5ATMA1
Product description :	Single N-Channel 100 V 2.7 mOhm 142 nC OptiMOS™5 Power Mosfet - D2PAK-3

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