IPB017N10N5ATMA1
  • 量产中
  • PG-TO263-7
  • EAR99
产品描述:
Single N-Channel 100 V 1.7 mOhm 168 nC OptiMOS™ Power Mosfet - D2PAK-7
标准包装:1
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FET Feature Standard
Package / Case TO-263-7, D²Pak (6 Leads + Tab)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 180A (Tc)
Part Status Active
Manufacturer Infineon Technologies
Series OptiMOS™
Vgs(th) (Max) @ Id 3.8V @ 279µA
Operating Temperature -55°C ~ 175°C (TJ)
Packaging Cut Tape (CT)
Rds On (Max) @ Id, Vgs 1.7 mOhm @ 100A, 10V
Power - Max 375W
Supplier Device Package PG-TO263-7
Gate Charge (Qg) @ Vgs 210nC @ 10V
Category Discrete Semiconductor Products
FET Type MOSFET N-Channel, Metal Oxide
Family Transistors - FETs, MOSFETs - Single
Mounting Type Surface Mount
Input Capacitance (Ciss) @ Vds 15600pF @ 50V
ECCN EAR99
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