| FGA40T65SHD | ||
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| 产品描述：
IGBT，650V，40A
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| 标准包装：1 | ||
| 数据手册： |
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| Collector-Emitter Saturation Voltage: | 2.14 V |
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| Continuous Collector Current Ic Max: | 80 A |
| Pd - Power Dissipation: | 268 W |
| Minimum Operating Temperature: | - 55 C |
| Brand: | Fairchild Semiconductor |
| Package / Case: | TO-3PN |
| Product Category: | IGBT Transistors |
| Unit Weight: | 0.225789 oz |
| Maximum Gate Emitter Voltage: | 30 V |
| Packaging: | Bulk |
| Manufacturer: | Fairchild Semiconductor |
| Continuous Collector Current at 25 C: | 80 A |
| Factory Pack Quantity: | 450 |
| RoHS: | Details |
| Gate-Emitter Leakage Current: | 400 nA |
| Collector- Emitter Voltage VCEO Max: | 650 V |
| Mounting Style: | Through Hole |
| Maximum Operating Temperature: | + 175 C |
| 数据手册： |
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