| CSD16401Q5 | ||
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| 产品描述：
MOSFET N-CH 25V 100A 8-SON
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| 标准包装：2500 | ||
| 数据手册： | ||
| ECAD模型:
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- 规格参数
- 产品特性
- 技术文档
- 产品评论
| PCN Assembly/Origin | Qualification Assembly/Test Site 03/Mar/2014 Qualification Wire Bond 27/May/2014 |
|---|---|
| Product Training Modules | NexFET MOSFET Technology |
| Design Resources | Create your power design now with TI’s WEBENCH® Designer |
| Mounting Type | Surface Mount |
| FET Feature | Logic Level Gate |
| Package / Case | 8-TDFN Exposed Pad |
| Supplier Device Package | 8-SON |
| Gate Charge (Qg) @ Vgs | 29nC @ 4.5V |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Series | NexFET™ |
| Input Capacitance (Ciss) @ Vds | 4100pF @ 12.5V |
| Power - Max | 3.1W |
| Video File | NexFET Power Block PowerStack™ Packaging Technology Overview |
| Vgs(th) (Max) @ Id | 1.9V @ 250µA |
| Packaging | Cut Tape (CT) |
| Rds On (Max) @ Id, Vgs | 1.6 mOhm @ 40A, 10V |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 38A (Ta), 100A (Tc) |
| PCN Design/Specification | Qualification Revision A 01/Jul/2014 |
| Online Catalog | N-Channel Logic Level Gate FETs |
| Family | FETs - Single |
| RoHS | Lead free / RoHS Compliant |
| 数据手册： |
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