EMF22T2R
  • 1 (Unlimited)
  • 量产中
  • EMT6
产品描述:
TRANS NPN PREBIAS/NPN 0.15W EMT6
标准包装:8000
数据手册: --
ECAD模型:
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Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA
Resistor - Base (R1) (Ohms) 10k
Power - Max 150mW
Resistor - Emitter Base (R2) (Ohms) 10k
Standard Package   8,000
Packaging   Tape & Reel (TR)  
Family Transistors (BJT) - Arrays, Pre-Biased
Current - Collector Cutoff (Max) 500nA
Categories Discrete Semiconductor Products -> Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Part Status Obsolete
Frequency - Transition 250MHz, 320MHz
Package / Case SOT-563, SOT-666
Transistor Type 1 NPN Pre-Biased, 1 NPN
Supplier Device Package EMT6
Current - Collector (Ic) (Max) 100mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 50V, 12V
Mounting Type Surface Mount
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA, 5V / 270 @ 10mA, 2V
Resistor - Base (R1) 10 kOhms
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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