DMN1019USN-7 specifications -Ameya360 electronic components purchase network


DMN1019USN-7

ACTIVE EAR99
Product description : N-Channel 12 V 10 mΩ 50.6 nC SMT Enhancement Mode Mosfet - SC-59 (SOT-23)
SPQ：3000
Datasheet : DMN1019USN-7.pdf

Packaging:	Reel
Qg - Gate Charge:	27.3 nC
Pd - Power Dissipation:	1.2 W
Package / Case:	SOT-23-3
Configuration:	Single
Unit Weight:	0.000282 oz
Number of Channels:	1 Channel
Typical Turn-On Delay Time:	7.6 ns
Series:	DMN1019
Factory Pack Quantity:	3000
Brand:	Diodes Incorporated
RoHS:	Details
Id - Continuous Drain Current:	9.3 A
Rise Time:	57.6 ns
Maximum Operating Temperature:	+ 150 C
Rds On - Drain-Source Resistance:	41 mOhms
Minimum Operating Temperature:	- 55 C
Technology:	Si
Vgs th - Gate-Source Threshold Voltage:	0.53 V
Vgs - Gate-Source Voltage:	4.5 V
Mounting Style:	SMD/SMT
Fall Time:	16.8 ns
Manufacturer:	Diodes Incorporated
Transistor Polarity:	N-Channel
Channel Mode:	Enhancement
Typical Turn-Off Delay Time:	22.2 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	12 V
Transistor Type:	1 N-Channel
ECCN	EAR99

Datasheet： DMN1019USN-7.pdf

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Stock code :	2463063
Mfg name :	Diodes Incorporated
MPN :	DMN1019USN-7
Product description :	N-Channel 12 V 10 mΩ 50.6 nC SMT Enhancement Mode Mosfet - SC-59 (SOT-23)

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