IRF3703PBF specifications -Ameya360 electronic components purchase network


IRF3703PBF

ACTIVE TO-220AB
Product description : Single N-Channel 30 V 2.8 mOhm 209 nC HEXFET® Power Mosfet - TO-220-3
SPQ：1
Datasheet : IRF3703PBF.pdf

FET Feature	Standard
Package / Case	TO-220-3
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	210A (Tc)
Product Training Modules	High Voltage Integrated Circuits (HVIC Gate Drivers) Discrete Power MOSFETs 40V and Below
Online Catalog	N-Channel Standard FETs
Family	FETs - Single
Vgs(th) (Max) @ Id	4V @ 250µA
Packaging	Tube
Rds On (Max) @ Id, Vgs	2.8 mOhm @ 76A, 10V
Power - Max	3.8W
Supplier Device Package	TO-220AB
Gate Charge (Qg) @ Vgs	209nC @ 10V
FET Type	MOSFET N-Channel, Metal Oxide
Series	HEXFET®
Mounting Type	Through Hole
Input Capacitance (Ciss) @ Vds	8250pF @ 25V
RoHS	Lead free / RoHS Compliant

Datasheet： IRF3703PBF.pdf

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Stock code :	22569
Mfg name :	Infineon Technologies
MPN :	IRF3703PBF
Product description :	Single N-Channel 30 V 2.8 mOhm 209 nC HEXFET® Power Mosfet - TO-220-3

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