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| 产品描述：
PHOTOTRANSISTOR NPN 850NM TH
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| 标准包装：1000 | ||
| 数据手册： -- | ||
| ECAD模型:
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- 规格参数
- 产品特性
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| Product: | Phototransistors |
|---|---|
| Collector-Emitter Saturation Voltage: | 150 mW |
| Width: | 1.8 mm |
| Collector-Emitter Breakdown Voltage: | 35 V |
| Pd - Power Dissipation: | 90 mW |
| Package / Case: | Miniature Array |
| Mounting Style: | Through Hole |
| Length: | 2.4 mm |
| Peak Wavelength: | 850 nm |
| Brand: | OSRAM Opto Semiconductors |
| RoHS: | Details |
| Collector- Emitter Voltage VCEO Max: | 35 V |
| Rise Time: | 6 us, 8 us |
| Wavelength: | 850 nm |
| Light Current: | 320 uA |
| Lens Color/Style: | Transparent |
| Maximum On-State Collector Current: | 50 mA |
| Minimum Operating Temperature: | - 40 C |
| Half Intensity Angle Degrees: | 18 deg |
| Height: | 3.4 mm |
| Fall Time: | 6 us, 8 us |
| Manufacturer: | Osram Opto Semiconductor |
| Factory Pack Quantity: | 1000 |
| Part # Aliases: | Q62702P3584 |
| Product Category: | Phototransistors |
| Dark Current: | 1 nA |
| Type: | Silicon NPN Phototransistor Arrays |
| Maximum Operating Temperature: | + 80 C |
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