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| 产品描述：
Single N-Channel 55 V 0.1 Ohm 15.6 nC HEXFET® Power Mosfet - SOT-223
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| 标准包装：1 | ||
| 数据手册： |
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| FET Feature | Logic Level Gate |
|---|---|
| Package / Case | TO-261-4, TO-261AA |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25°C | 3.1A (Ta) |
| PCN Design/Specification | SOT-223 FET Wire 04/Jul/2013 SOT-223 Cu Wire 08/Oct/2013 |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Series | HEXFET® |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) @ Vds | 510pF @ 25V |
| RoHS | Lead free / RoHS Compliant |
| Rds On (Max) @ Id, Vgs | 65 mOhm @ 3.1A, 10V |
| Power - Max | 1W |
| Supplier Device Package | SOT-223 |
| Gate Charge (Qg) @ Vgs | 15.6nC @ 5V |
| Product Training Modules | High Voltage Integrated Circuits (HVIC Gate Drivers) |
| Online Catalog | N-Channel Logic Level Gate FETs |
| Family | FETs - Single |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Packaging | Digi-Reel® |
| ECCN | EAR99 |
| 数据手册： |
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