| BC637 | ||
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| 产品描述：
Transistor: NPN; bipolar; 60V; 1A; 0.8/2.75W; TO92
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| 标准包装：5 | ||
| 数据手册： -- | ||
| ECAD模型:
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- 规格参数
- 产品特性
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| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
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| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Transistor Type | NPN |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 1A |
| Voltage - Collector Emitter Breakdown (Max) | 60V |
| Mounting Type | Through Hole |
| ECCN | EAR99 |
| Frequency - Transition | 200MHz |
| Power - Max | 625mW |
| PCN Obsolescence/ EOL | Multiple Devices 30/Jun/2006 |
| Standard Package | 5,000 |
| Packaging | Bulk |
| Family | Transistors (BJT) - Single |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 2V |
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