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| 产品描述：
Single N-Channel 55 V 8 mOhm 40 nC Automotive HEXFET® Power Mosfet - D2PAK
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| 标准包装：50 | ||
| 数据手册： |
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| FET Feature | Logic Level Gate |
|---|---|
| PCN Assembly/Origin | Gen10.2 Mosfet Qualification 12/Dec/2013 |
| Power - Max | 130W |
| Supplier Device Package | D2PAK |
| Gate Charge (Qg) @ Vgs | 60nC @ 5V |
| Product Training Modules | High Voltage Integrated Circuits (HVIC Gate Drivers) |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | FETs - Single |
| Mounting Type | Surface Mount |
| ECCN | EAR99 |
| Rds On (Max) @ Id, Vgs | 8 mOhm @ 52A, 10V |
| Package / Case | TO-263-3, D虏Pak (2 Leads + Tab), TO-263AB |
| Drain to Source Voltage (Vdss) | 55V |
| Standard Package | 50 |
| Current - Continuous Drain (Id) @ 25掳C | 75A (Tc) |
| Packaging | Tube |
| Series | HEXFET庐 |
| Vgs(th) (Max) @ Id | 3V @ 250碌A |
| Input Capacitance (Ciss) @ Vds | 2880pF @ 25V |
| 数据手册： |
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