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| 产品描述：
Single N-Channel 55 V 57.5 mOhm 9.1 nC HEXFET® Power Mosfet - SOT-223
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| 标准包装：1 | ||
| 数据手册： |
- 规格参数
- 产品特性
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| PCN Assembly/Origin | Backend Wafer Transfer 23/Oct/2013 |
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| Product Training Modules | High Voltage Integrated Circuits (HVIC Gate Drivers) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Packaging | Digi-Reel® |
| Rds On (Max) @ Id, Vgs | 57.5 mOhm @ 3.1A, 10V |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25°C | 5.1A (Ta) |
| PCN Design/Specification | SOT-223 FET Wire 04/Jul/2013 SOT-223 Cu Wire 08/Oct/2013 |
| Online Catalog | N-Channel Logic Level Gate FETs |
| Family | FETs - Single |
| RoHS | Lead free / RoHS Compliant |
| Power - Max | 1W |
| Design Resources | IRFL024Z Saber Model IRFL024Z Spice Model |
| Mounting Type | Surface Mount |
| FET Feature | Logic Level Gate |
| Package / Case | TO-261-4, TO-261AA |
| Supplier Device Package | SOT-223 |
| Gate Charge (Qg) @ Vgs | 14nC @ 10V |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Series | HEXFET® |
| Input Capacitance (Ciss) @ Vds | 340pF @ 25V |
| 数据手册： |
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