| APT94N65B2C3G | ||
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| 产品描述：
APT94N65B2C3 Series N Channel 650 V 94 A 35 mOhm 580 nC Mosfet - TO-247-3
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| 标准包装：50 | ||
| 数据手册： -- |
- 规格参数
- 产品特性
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| Fall Time: | 167 ns |
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| Rds On - Drain-Source Resistance: | 30 mOhms, 30 mOhms |
| Manufacturer: | Microsemi |
| Minimum Operating Temperature: | - 55 C |
| Channel Mode: | Enhancement |
| Technology: | Si |
| Typical Turn-Off Delay Time: | 498 ns |
| Package / Case: | T-Max |
| Id - Continuous Drain Current: | 94 A, 94 A |
| Vds - Drain-Source Breakdown Voltage: | 650 V, 650 V |
| Configuration: | Dual |
| Mounting Style: | Through Hole |
| ECCN | EAR99 |
| Typical Turn-On Delay Time: | 32 ns |
| Qg - Gate Charge: | 580 nC |
| Pd - Power Dissipation: | 833 W |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity: | 18 |
| Brand: | Microsemi |
| RoHS: | Details |
| Product Category: | MOSFET |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Rise Time: | 59 ns |
| Vgs - Gate-Source Voltage: | 20 V |
| Maximum Operating Temperature: | + 150 C |
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