SIHP12N60E-E3 specifications -Ameya360 electronic components purchase network


SIHP12N60E-E3

ACTIVE EAR99
Product description : E-Series N-Channel 600 V 0.38 Ω 58 nC Flange Mount Power Mosfet - TO-220AB
SPQ：1
Datasheet : SIHP12N60E-E3.pdf

Minimum Operating Temperature:	- 55 C
Rds On - Drain-Source Resistance:	380 mOhms
Pd - Power Dissipation:	147 W
Tradename:	TrenchFET
Configuration:	Single
Unit Weight:	0.211644 oz
Number of Channels:	1 Channel
Typical Turn-On Delay Time:	14 nS
Manufacturer:	Vishay
Transistor Polarity:	N-Channel
Brand:	Vishay Semiconductors
RoHS:	Details
Id - Continuous Drain Current:	12 A
Rise Time:	19 ns
Transistor Type:	1 N-Channel
ECCN	EAR99
Qg - Gate Charge:	29 nC
Packaging:	Tube
Technology:	Si
Package / Case:	TO-220-3
Vgs - Gate-Source Voltage:	20 V
Mounting Style:	Through Hole
Fall Time:	19 ns
Forward Transconductance - Min:	3.8 S
Series:	E
Factory Pack Quantity:	1000
Typical Turn-Off Delay Time:	35 nS
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	600 V
Type:	E Series Power MOSFET
Maximum Operating Temperature:	+ 150 C

Datasheet： SIHP12N60E-E3.pdf

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Stock code :	214671
Mfg name :	Vishay
MPN :	SIHP12N60E-E3
Product description :	E-Series N-Channel 600 V 0.38 Ω 58 nC Flange Mount Power Mosfet - TO-220AB

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