IPP90R800C3 specifications -Ameya360 electronic components purchase network


IPP90R800C3

ACTIVE
Product description : 900V,800mΩ,6.9A,N-Channel Power MOSFET
SPQ：1
Datasheet : IPP90R800C3.pdf

Minimum Operating Temperature:	- 55 C
Packaging:	Tube
Pd - Power Dissipation:	104 W
Tradename:	CoolMOS
Height:	9.45 mm
Vgs - Gate-Source Voltage:	20 V
Mounting Style:	Through Hole
Fall Time:	32 ns
Length:	10.36 mm
Series:	CoolMOS C3
Factory Pack Quantity:	500
Brand:	Infineon Technologies
Typical Turn-Off Delay Time:	400 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	900 V
Transistor Type:	1 N-Channel
Rds On - Drain-Source Resistance:	800 mOhms
Width:	4.57 mm
Technology:	Si
Package / Case:	TO-220-3
Configuration:	Single
Unit Weight:	0.211644 oz
Number of Channels:	1 Channel
Typical Turn-On Delay Time:	70 ns
Manufacturer:	Infineon
Transistor Polarity:	N-Channel
Channel Mode:	Enhancement
Part # Aliases:	IPP90R800C3XK IPP90R800C3XKSA1 SP000683102
RoHS:	Details
Id - Continuous Drain Current:	6.9 A
Rise Time:	20 ns
Maximum Operating Temperature:	+ 150 C

Datasheet： IPP90R800C3.pdf

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