STF20N65M5
  • 量产中
  • ECL99
产品描述:
N-Channel 650 V 18 A 0.19 Ohm MDmesh V Power Mosfet - TO-220FP
标准包装:1
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Rds On - Drain-Source Resistance: 190 mOhms
Fall Time: 7.5 ns
Qg - Gate Charge: 36 nC
Series: MDmesh M5
Transistor Polarity: N-Channel
Technology: Si
RoHS:  Details
Product Category: MOSFET
Vgs th - Gate-Source Threshold Voltage: 4 V
Rise Time: 7.5 ns
Unit Weight: 0.011640 oz
Mounting Style: Through Hole
Packaging: Tube
Number of Channels: 1 Channel
Manufacturer: STMicroelectronics
Pd - Power Dissipation: 130 W
Factory Pack Quantity: 50
Brand: STMicroelectronics
Package / Case: TO-220-3
Id - Continuous Drain Current: 18 A
Vds - Drain-Source Breakdown Voltage: 650 V
Vgs - Gate-Source Voltage: 650 V
Transistor Type: 1 N-Channel
ECCN ECL99
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